Cambridge GaN Devices (CGD) and Neways Electronics (Neways) sign an agreement to develop high-efficiency, photovoltaic solar inverter products based on gallium nitride technology

Cambridge GaN Devices (CGD), a clean-tech semiconductor company that develops a range of energy-efficient Gallium Nitride (GaN)-based power devices that enable more sustainable electronics, and Neways Electronics (Neways), the international innovator in electronics for Smart mobility, Semicon solutions and Connectivity, sign an agreement to develop high-efficiency, photovoltaic solar inverter products based on gallium nitride technology at Electronica 2022.

Dr, Giorgia Longobardi Co-Founder & CEO at Cambridge GaN Devices said: "Neways and CGD are perfectly aligned in our commitment to a sustainable future based on clean tech energy. We believe that this program to jointly develop photovoltaic products that lead the world in terms of efficiency and performance will move the market forward and contribute to a better world."

Hans Ketelaars, Chief Technology Officer, at Neways Electronics, explained: "Neways is committed to working with like-minded innovative companies to bring state-of-the-art, sustainable energy solutions to the market. CGD's high-efficiency GaN devices are a perfect fit for our key applications in mobility, industrial and medical end-markets."

The partnership, which was forged after the two companies met while collaborating on the European-funded GaNext project, has already borne fruit. At Electronica, both on the Neways booth, and at CGD's booth (Hall C3, Booth 535), visitors will be able to see a demo of a 3kW photovoltaic inverter jointly developed by the two companies. Using eight CGD65A055S2 GaN transistors, this transformer-less, ultra-compact design achieves a power density of 1kW/L. With a Vin of 150-350VDC, a Vout of 230VAC and a switching frequency of 350kHz the design has a maximum efficiency of 99.22% for the boost converter.

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