National Yang Ming Chiao Tung University
National Yang Ming Chiao Tung University
01/10/2024 | Press release | Distributed by Public on 01/09/2024 22:41
NYCU’s Breakthrough in Transistor Technology Advancing Moore’s Law with Enhanced Chip Integration Density
By NYCU Elite
Edited by Ene Chuang
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Edited by Ene Chuang
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National Yang Ming Chiao Tung University (NYCU) has been deeply committed to advanced transistor technology research. The research team, led by Professor Po-Tsun Liu from the Department of Photonics at NYCU, has developed "Ultra High-Density Heterogeneous Complementary Field-Effect Transistor Technology" this year to challenge the next-generation technology goal of angstrom-scale integrated circuits. This achievement offers hope for the continuous improvement of the density of integration of chip circuits, and the research results have been published in the internationally renowned academic journal Advanced Science in 2023.
National Yang Ming Chiao Tung University pioneers cutting-edge integrated circuit chip technology with ultra-high density of integration
National Yang Ming Chiao Tung University pioneers cutting-edge integrated circuit chip technology with ultra-high density of integration
This research, a component of the "Angstrom Semiconductor Initiative," spearheaded by Professor Po-Tsun Liu, in collaboration with Yushan Fellow of the Ministry of Education, Professor Yue Kuo from Texas A&M, has focused on three key areas: materials, electronic devices, and circuits. Specifically, the research has innovated the development of complementary field-effect transistor technology (CFET), which is suitable for the application of monolithic three-dimensional integrated circuits (M3D-ICs).
According to Prof. Liu, the exponential growth of the semiconductor industry has resulted in an escalating demand for high-performance chips featured by high speed, high density of integration, and low power consumption. To overcome the physical limit of miniaturization, the concept of M3D-ICs was proposed. This involves vertically stacking multiple layers of transistor devices within a limited area, potentially surpassing Moore's Law.
In a recent project, a team of researchers from NYCU developed a novel nanometer-thick amorphous indium tungsten oxide (a-IWO) semiconductor channel layer. They successfully implemented a complementary inverter logic circuit, which uses a novel N-type amorphous indium tungsten oxide transistor, combined with P-type polycrystalline silicon thin-film transistor (poly-Si TFT).
According to Prof. Liu, the exponential growth of the semiconductor industry has resulted in an escalating demand for high-performance chips featured by high speed, high density of integration, and low power consumption. To overcome the physical limit of miniaturization, the concept of M3D-ICs was proposed. This involves vertically stacking multiple layers of transistor devices within a limited area, potentially surpassing Moore's Law.
In a recent project, a team of researchers from NYCU developed a novel nanometer-thick amorphous indium tungsten oxide (a-IWO) semiconductor channel layer. They successfully implemented a complementary inverter logic circuit, which uses a novel N-type amorphous indium tungsten oxide transistor, combined with P-type polycrystalline silicon thin-film transistor (poly-Si TFT).
Professor Po-Tsun Liu discussed experimental data with the laboratory team
The inverter circuit is known for its high voltage gain, low power consumption, and a high noise margin. By using a three-dimensional stacking structure, the inverter circuit significantly reduces the area used by devices, effectively enhancing the density of integration of transistor devices and circuits.
In a recent study, the research team successfully integrated heterogeneous semiconductor channel materials: low-temperature polycrystalline silicon and indium tungsten oxide channel transistors, to create a CFET-based inverter circuit. This innovative development demonstrates the potential application of the technology in M3D-ICs.
"If we integrate this atomically-thin oxide transistor with front-end-of-line devices for three-dimensional integrated circuit technology, it could increase the density of transistors on the chip and enhance chip functionality to meet diverse product applications. Additionally, it could advance semiconductor technology and continue the trajectory of Moore's Law," said Prof. Liu.
The three-dimensional integration technology of heterogeneous semiconductor devices allows CFET to achieve high voltage gain under low operating voltage, making it ideal for various low-power consumption applications such as AIoT smart networks, driver ICs, wearable electronics, display panels, and the metaverse-related industry chain. The CFET technology boasts higher energy efficiency, contributing to a low-carbon emission production chain, anticipating its future application in the semiconductor industry to realize the goal of a green semiconductor production chain.
In a recent study, the research team successfully integrated heterogeneous semiconductor channel materials: low-temperature polycrystalline silicon and indium tungsten oxide channel transistors, to create a CFET-based inverter circuit. This innovative development demonstrates the potential application of the technology in M3D-ICs.
"If we integrate this atomically-thin oxide transistor with front-end-of-line devices for three-dimensional integrated circuit technology, it could increase the density of transistors on the chip and enhance chip functionality to meet diverse product applications. Additionally, it could advance semiconductor technology and continue the trajectory of Moore's Law," said Prof. Liu.
The three-dimensional integration technology of heterogeneous semiconductor devices allows CFET to achieve high voltage gain under low operating voltage, making it ideal for various low-power consumption applications such as AIoT smart networks, driver ICs, wearable electronics, display panels, and the metaverse-related industry chain. The CFET technology boasts higher energy efficiency, contributing to a low-carbon emission production chain, anticipating its future application in the semiconductor industry to realize the goal of a green semiconductor production chain.
Intensive Collaboration with Domestic and International Scholars and Industry
The NYCU faculty actively engages in extensive collaborations with domestic and international scholars, industry partners, and government agencies to enhance research and development resources. Since 2020, Prof. Liu's team has undertaken a forward-looking collaboration with TSMC, actively participating in the Joint Development Project (JDP) focused on the development of three-dimensional transistor technology. Additionally, they are involved in international collaborations with Professor Yue Kuo from Texas A&M University, Professor Peide Ye from Purdue University, and Academician Chenming Hu from the Academia Sinica.
Currently, a cross-university team is executing two phases of the "Angstrom Semiconductor Initiative," with the guidance of Prof. Liu. This team primarily focuses on developing critical technologies for high-density integrated circuits in forward-looking Monolithic Three-dimensional Integrated Circuit (M3D-IC) technologies. This initiative aims to address critical challenges in the production technology of angstrom-scale devices and circuits to achieve the performance of 2030 equivalent 1-nm node in integration density and cost of logic and memory circuits.
Professor Po-Tsun Liu from the Department of Photonics at National Yang Ming Chiao Tung University
International Research Collaboration: Bridging Students' Gap Between Theory and Practice
Collaboration between on-campus faculty and industry plays a pivotal role in advancing research and technology within the field. Moreover, it offers students valuable insights into the latest technological developments in the industry, effectively bridging the gap between theoretical knowledge and practical application. Prof. Liu emphasizes, "This is why almost all graduate students from NYCU College of Electrical and Computer Engineering (ECE) secure job opportunities with Taiwan's semiconductor industry giants even before graduation."
Furthermore, he highlighted the university's provision of financial support and diverse international exchange programs, encouraging students to capitalize on these opportunities. Participation in such programs, he noted, not only allows students to refine their communication skills and boost their confidence but also provides them with fresh knowledge that can inspire innovative ideas.
In his closing statements, Prof. Liu reiterated the profound significance of perseverance in research. Overcoming the inclination to "give up," he emphasized, forms a sturdy foundation in academic pursuits and is the singular path to achieving success in one's studies. Professor Po-Tsun Liu and the laboratory team
International Research Collaboration: Bridging Students' Gap Between Theory and Practice
Collaboration between on-campus faculty and industry plays a pivotal role in advancing research and technology within the field. Moreover, it offers students valuable insights into the latest technological developments in the industry, effectively bridging the gap between theoretical knowledge and practical application. Prof. Liu emphasizes, "This is why almost all graduate students from NYCU College of Electrical and Computer Engineering (ECE) secure job opportunities with Taiwan's semiconductor industry giants even before graduation."
Furthermore, he highlighted the university's provision of financial support and diverse international exchange programs, encouraging students to capitalize on these opportunities. Participation in such programs, he noted, not only allows students to refine their communication skills and boost their confidence but also provides them with fresh knowledge that can inspire innovative ideas.
In his closing statements, Prof. Liu reiterated the profound significance of perseverance in research. Overcoming the inclination to "give up," he emphasized, forms a sturdy foundation in academic pursuits and is the singular path to achieving success in one's studies. Professor Po-Tsun Liu and the laboratory team