Vishay Intertechnology Inc.

01/29/2025 | Press release | Distributed by Public on 01/29/2025 02:11

Vishay Intertechnology 650 V and 1200 V SiC Schottky Diodes in SOT-227 Package Increase Efficiency in High Frequency Applications

MALVERN, Pa. - Jan. 29, 2025 - Vishay Intertechnology, Inc. (NYSE: VSH) today introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the industry-standard SOT-227 package. Designed to deliver high speed and efficiency for high frequency applications, the Vishay Semiconductors devices offer the best trade-off between capacitive charge (QC) and forward voltage drop for diodes in their class.

The devices released today consist of 40 A to 240 A dual-diode components in a parallel configuration, and 50 A and 90 A single phase bridge devices. Built on state of the art thin wafer technology, the diodes' low forward voltage drop down to 1.36 V dramatically reduces conduction losses for increased efficiency. Further increasing efficiency, the devices offer better reverse recovery parameters than Si-based diodes and have virtually no recovery tail.

Typical applications for the components will include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters for photovoltaic systems, charging stations, industrial UPS, and telecom power supplies. In these applications, the diodes' low QC down to 56 nC allows for high speed switching, while their industry-standard package offers a drop-in replacement for competing solutions.

The diodes deliver high temperature operation to +175 °C and a positive temperature coefficient for easy parallelling. UL-approved to file E78996, the devices feature a large creepage distance between terminals and a simplified mechanical design for rapid assembly.

Device Specification Table:

Part Number

VR
(V)

IF(AV)
(A)

VF at
IF (V)

IFSM
(A)

QC
(nC)

Configuration

VS-SC40FA65

650

40

1.36

105

561

Two separate diodes, parallel pin-out

VS-SC80FA65

80

1.36

225

1101

Two separate diodes, parallel pin-out

VS-SC120FA65

120

1.39

340

1641

Two separate diodes, parallel pin-out

VS-SC160FA65

160

1.38

450

2201

Two separate diodes, parallel pin-out

VS-SC200FA65

200

1.39

555

2751

Two separate diodes, parallel pin-out

VS-SC240FA65

240

1.40

675

3281

Two separate diodes, parallel pin-out

VS-SC50BA65

50

1.50

267

1101

Single phase bridge

VS-SC90BA65

90

1.61

340

1641

Single phase bridge

VS-SC40FA120

1200

40

1.39

130

1122

Two separate diodes, parallel pin-out

VS-SC80FA120

80

1.4

260

2242

Two separate diodes, parallel pin-out

VS-SC120FA120

120

1.42

385

3332

Two separate diodes, parallel pin-out

VS-SC160FA120

160

1.44

500

4442

Two separate diodes, parallel pin-out

VS-SC200FA120

200

1.45

620

5532

Two separate diodes, parallel pin-out

VS-SC240FA120

240

1.45

690

6512

Two separate diodes, parallel pin-out

VS-SC50BA120

50

1.5

328

2232

Single phase bridge

VS-SC90BA120

90

1.9

500

3322

Single phase bridge

1VR = 400 V

2VR = 800 V

Samples and production quantities of the new SiC diodes are available now, with lead times of 18 weeks.